Atomic Layer Deposition (ALD) System

Atomic Layer Deposition (ALD) System – Precision Thin Film Engineering at the Atomic Scale

Overview

Le Atomic Layer Deposition (ALD) System is a cutting-edge thin-film deposition technology that enables the growth of ultra-thin, conformal, and highly uniform films with atomic-level precision. Unlike traditional CVD or PVD methods, ALD operates through a self-limiting surface reaction mechanism, allowing precise control over film thickness down to sub-nanometer resolution.

This system is ideal for advanced applications in semiconductors, microelectronics, energy storage, biomedical devices, and nanotechnology, where uniformity, pinhole-free coverage, and high purity are critical.

Our ALD system supports a wide range of materials—including oxides, nitrides, metals, and complex compounds—making it a versatile platform for both research and industrial production.

How It Works: The Principle of ALD

Atomic Layer Deposition is based on sequential, self-saturating surface reactions between two or more chemical precursors. The process follows four key steps:

Pulse 1: A precursor gas (e.g., TMA for Al₂O₃) is introduced into the chamber and adsorbs onto the substrate surface.
Purge: Inert gas (e.g., N₂ or Ar) removes excess precursor and byproducts.
Pulse 2: A second precursor (e.g., H₂O) reacts with the first to form a chemically bonded layer.
Purge: Another purge step removes unreacted species and byproducts.

This cycle repeats until the desired film thickness is achieved. Each cycle deposits one atomic layer, enabling precise thickness control with excellent step coverage even on high-aspect-ratio structures.

Key Applications

Industry	Application
Semiconductors	High-k dielectric layers (HfO₂, Al₂O₃), gate stack engineering, DRAM capacitors
Nanoelectronics	Conformal coating of nanowires, 3D NAND memory, FinFETs
Energy Storage	Electrode passivation layers for batteries, solid-state electrolytes
Photovoltaics	Anti-reflective coatings, transparent conductive oxides (TCOs)
Biomedical Devices	Biocompatible coatings (e.g., TiO₂, ZnO), drug delivery systems
MEMS & Sensors	Protective layers, functional surfaces for gas/chemical sensing
Research & Development	Synthesis of novel materials, quantum dots, heterostructures

✅ Note: ALD is also used in plasma-enhanced ALD (PE-ALD) and remote plasma ALD for low-temperature processing.

Materials Supported

Our ALD system supports a broad range of metallic, oxide, nitride, and composite materialsy compris :

Material Class	Examples
Oxides	Al₂O₃, TiO₂, ZrO₂, HfO₂, Ta₂O₅, SiO₂, Nb₂O₅, MgO, CaO, CuO
Nitrides	AlN, TiN, Si₃N₄, TaN, WN
Metals	Ru, Pt, Ir, Pd, Ni, Cu
Carbides	TiC, TaC, WC
Hydroxyapatite	Ca₁₀(PO₄)₆(OH)₂ (for biomedical implants)
Polymers	PMDA–DAH, PMDA–ODA (for organic electronics)
Complex Structures	Multilayers, doped films, graded compositions

🔬 Custom precursor compatibility available upon request.

Avantages techniques

✅ Atomic-Level Control: Deposit films with sub-nm precision — perfect for next-gen devices.
✅ Excellent Conformality: Uniform coverage on trenches, vias, and 3D structures.
✅ High Purity & Low Defects: Self-limiting reactions minimize defects and pinholes.
✅ Low-Temperature Processing: Compatible with temperature-sensitive substrates (e.g., polymers, flexible electronics).
✅ Scalable Design: From lab-scale R&D to pilot production lines.
✅ Modular Architecture: Supports multiple precursors, gas injection modes, and process configurations.

Product Specifications

Parameter	Specification
Deposition Method	Thermal ALD / Plasma-Enhanced ALD (PE-ALD)
Temperature Range	50°C – 400°C (upgradable to 600°C)
Chamber Pressure	0.1 – 100 Torr (adjustable)
Precursor Lines	2–8 channels (configurable)
Gas Delivery	Mass flow controllers (MFCs), pulse valves, purging system
Control Interface	Touchscreen HMI + PLC logic
Contrôle des processus	Automated cycle programming (pulse/purge duration)
Vacuum System	Rotary vane pump + optional turbo pump
Substrate Size	Up to 6″ wafer or custom holder
Rotation Support	Optional rotating stage for improved uniformity
Data Logging	Real-time monitoring, cloud storage (optional)
Dimensions (L×W×H)	~1000 × 800 × 1200 mm
Weight	~200 kg
Certifications	CE, RoHS, ISO 9001

📌 Custom configurations available for specific materials, throughput, or integration with other tools (e.g., sputtering, etching).

Intelligent Features

Automated Pulse Sequencing:
Pre-programmable cycles with adjustable pulse and purge times for different materials.
Multi-Precursor Support:
Simultaneous or sequential use of up to 8 precursors for complex multilayer films.
Plasma Enhancement Option:
Enables low-temperature ALD using remote plasma source (e.g., O₂, N₂, NH₃).
Remote Monitoring & Cloud Access:
Real-time data logging and remote control via secure network connection.
Over-Pressure Protection:
Automatic shutdown if pressure exceeds safe limits.
Material Library:
Built-in database of common ALD recipes (Al₂O₃, TiO₂, HfO₂, etc.) for quick setup.

Why Choose Our ALD System?

✔️ Industry-Leading Precision: Achieve ±1 Å thickness control — essential for advanced device fabrication.
✔️ High Throughput & Reliability: Optimized gas dynamics and thermal stability ensure consistent performance.
✔️ Flexible Platform: Supports both thermal and plasma-enhanced ALD processes.
✔️ Scalable for Production: Designed for seamless integration into semiconductor fabs and R&D labs.
✔️ Compliant with Cleanroom Standards: Suitable for Class 100–1000 environments.

Case Study: High-k Dielectric Growth for NAND Flash

A leading memory manufacturer adopted our ALD system to deposit HfO₂ as a high-k dielectric layer in 3D NAND flash memory. Results showed:

<±2% thickness variation across 300mm wafers
Perfect conformality in deep-trench structures
Improved leakage current performance due to defect-free films

This case highlights how ALD enables next-generation scaling in semiconductor manufacturing.

Conclusion

Le Atomic Layer Deposition (ALD) System represents the pinnacle of precision thin-film technology. With its ability to grow atomically controlled, conformal, and ultra-pure films, it is indispensable for pushing the boundaries of nanoelectronics, energy, and biomedicine.

Whether you’re developing advanced memory devices, designing bio-compatible coatings, or exploring new materials, our ALD system delivers unmatched accuracy, reliability, and versatility.

📞 Contact Us Today for a technical consultation, demo, or custom solution design.