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Rotating Deposition System – Advanced CVD Solution for Uniform Thin Film Growth

Overview

The Rotating Deposition System is a high-performance Chemical Vapor Deposition (CVD) platform designed for the precise, uniform growth of thin films on substrates in research and industrial applications. Featuring a rotating furnace design, this system ensures excellent temperature uniformity and film thickness consistency across large or complex-shaped samples—ideal for semiconductor, optoelectronic, and advanced materials development.

Built with modular components including vacuum tube furnaces, multi-channel gas delivery systems, and PID-controlled heating circuits, our rotating deposition system supports a wide range of CVD processes such as silicon dioxide (SiO₂) deposition, ZnO nanostructure growth, MLCC atmosphere sintering, and more.

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How It Works: Principles of Rotating CVD

In traditional vertical or horizontal CVD systems, temperature gradients and gas flow non-uniformities can lead to inconsistent film thickness, especially on larger wafers or irregular substrates.

Our rotating deposition technology addresses these challenges by:

1. Continuous Rotation: The sample holder rotates during deposition, ensuring uniform exposure to precursor gases.
2. Even Gas Distribution: Combined with optimized gas injection ports, rotation promotes homogeneous mixing and surface reaction.
3. Precise Temperature Control: Integrated PID control maintains ±1°C stability, minimizing thermal stress and defects.
4. Vacuum Compatibility: Operates under controlled pressure conditions (from atmospheric to high vacuum), enabling low-temperature, high-purity depositions.

This design enables high-quality, reproducible thin films with minimal grain boundaries and superior adhesion.

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Key Applications

Industry	Application
Semiconductors	Dielectric layer deposition (e.g., SiO₂, Si₃N₄), passivation layers
Optoelectronics	Growth of ZnO nanorods, quantum dots, and transparent conductive oxides (TCOs)
Energy Storage	Electrode coating for lithium-ion batteries, supercapacitors
Electronics Packaging	Ceramic capacitor (MLCC) atmosphere sintering, hermetic sealing
Research & Development	Nanomaterial synthesis, catalytic surface modification, MEMS device fabrication

✅ Note: Ideal for lab-scale R&D and pilot production lines requiring high precision and repeatability.

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Technical Advantages

• ✅ Uniform Film Thickness: Rotation reduces radial gradients → consistent deposition across entire substrate
• ✅ Low-Temperature Operation: Enables processing of temperature-sensitive materials (e.g., polymers, flexible substrates)
• ✅ Fast Heating/Cooling: Uses sliding furnace design for rapid thermal cycling
• ✅ Smart Gas Control: Supports multiple gas inputs with programmable flow rates and timing
• ✅ Pressure Regulation: External vacuum/pressure control allows tuning of deposition environment
• ✅ Data Logging & Cloud Storage: Real-time monitoring and remote access via cloud-based interface
• ✅ Safety Features: Over-pressure protection, automatic shutdown, and emergency stop

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Product Specifications

Parameter	Specification
Furnace Type	Vacuum Tube Furnace (Rotating Design)
Temperature Range	Room Temp – 1200°C (upgradable to 1500°C)
Temperature Stability	±1°C (PID control)
Heating Rate	Up to 30°C/min (adjustable)
Rotation Speed	0–60 rpm (variable speed control)
Chamber Pressure	Atmospheric to 10⁻³ Torr (vacuum compatible)
Gas Inlets	3–8 channels (configurable)
Gas Sources	Ar, N₂, O₂, H₂, NH₃, SiH₄, Zn(CH₃)₂, etc.
Sistema di controllo	Touchscreen HMI + PLC logic
Data Storage	Local + Cloud (optional)
Remote Monitoring	Yes (via Wi-Fi/4G)
Dimensions (L×W×H)	~1200 × 800 × 1500 mm
Weight	~250 kg
Certifications	CE, RoHS, ISO 9001

📌 Custom configurations available for specific process requirements (e.g., dual-zone heating, quartz tube options).

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Intelligent Features

• Smart Gas Injection:
  Configurable multi-stage gas input with different temperatures and durations per stage. Perfect for complex CVD recipes.
• External Pressure Control:
  Optional vacuum pump integration allows precise control over chamber pressure during deposition.
• Cloud Data Storage:
  All process parameters (temperature, pressure, gas flow, rotation speed) are logged and accessible remotely—ideal for traceability and quality assurance.
• Over-Pressure Protection:
  Automatically shuts down if pressure exceeds preset limit, ensuring safe operation.
• RF Power Support (Optional):
  Can integrate RF power source for plasma-enhanced CVD (PECVD) processes.

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Why Choose Our Rotating Deposition System?

• ✔️ Superior Uniformity: Rotation minimizes thickness variation — critical for high-performance devices.
• ✔️ High Flexibility: Supports various gases, pressures, and substrates.
• ✔️ Scalable Design: From lab-scale units to semi-industrial production lines.
• ✔️ Energy Efficient: Fast heat-up and cooling reduce energy consumption.
• ✔️ User-Friendly Interface: Intuitive touchscreen controls with real-time feedback.

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Case Study: ZnO Nanostructure Growth

A university research team used our rotating deposition system to grow ZnO nanorods on silicon substrates for UV photodetectors. Results showed:

• <±3% thickness variation across 10 cm diameter wafer
• Uniform crystal orientation due to rotational symmetry
• Improved optical response compared to static CVD systems

This demonstrates how rotational motion enhances both process uniformity and device performance.

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Conclusion

The Rotating Deposition System represents a significant advancement in thin-film deposition technology. By combining precise temperature control, dynamic rotation, and intelligent automation, it delivers unmatched film quality and process reliability.

Whether you’re growing functional oxides, developing next-gen sensors, or optimizing semiconductor processes, our system provides the precision, scalability, and safety needed for cutting-edge research and manufacturing.

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📞 Contact Us Today for a technical consultation, demo, or custom configuration.

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